BiGaON2

ceramic

· BiGaON2

BiGaON₂ is an experimental ternary ceramic compound combining bismuth, gallium, and nitrogen, belonging to the family of nitride ceramics with potential semiconducting or wide-bandgap properties. This material remains primarily in research and development phases, investigated for potential applications in high-temperature electronics, optoelectronics, or advanced ceramic systems where bismuth-containing phases could offer unique thermal or electrical characteristics. Engineers would consider this compound if developing next-generation wide-bandgap semiconductor devices or exploring bismuth-doped nitride ceramics for specialized high-temperature or radiation-resistant applications, though commercial maturity and scalable synthesis routes are not yet established.

wide-bandgap semiconductorshigh-temperature electronicsoptoelectronic devicesadvanced ceramic researchradiation-resistant materialsexperimental nitride compounds

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	-0.02013	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.140	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BiGaON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental