BiGaOFN

semiconductor

· BiGaOFN

BiGaOFN is an experimental oxynitride semiconductor compound combining bismuth, gallium, oxygen, and nitrogen elements, belonging to the broader family of mixed-anion semiconductors being developed for photocatalytic and optoelectronic applications. This material is primarily of research interest rather than established in commercial production, investigated for its potential to absorb visible light and enable efficient charge separation—properties that make it attractive for environmental remediation and energy conversion compared to conventional wide-bandgap semiconductors. The oxynitride class represents an emerging frontier in tuning electronic band structures for enhanced catalytic and light-harvesting performance in next-generation photovoltaic and water-splitting systems.

photocatalysis and environmental remediationvisible-light water splittingexperimental optoelectronicssolar energy conversion researchsemiconductor bandgap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3000	eV	—
Magnetic Moment(μB)	5.579e-15	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.6400	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BiGaOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control