BiCaN3

semiconductor

· BiCaN3

BiCaN₃ is an experimental ternary nitride semiconductor compound combining bismuth, carbon, and nitrogen elements. This material belongs to the family of wide-bandgap nitride semiconductors and represents emerging research into alternative nitride platforms beyond the conventional III-V nitride systems (GaN, AlN). BiCaN₃ is primarily of interest in materials research for next-generation power electronics, UV optoelectronics, and high-temperature device applications, though it remains in early-stage development with limited industrial deployment compared to established nitride alternatives.

experimental wide-bandgap semiconductorspower electronics researchUV optoelectronics developmenthigh-temperature device platformsadvanced nitride materialsnext-generation semiconductor research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.8000	eV	—
Magnetic Moment(μB)	-0.00000174	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BiCaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control