BiAs

ceramic

· JVASP-135633· BiAs

BiAs is a binary compound semiconductor ceramic composed of bismuth and arsenic, belonging to the III-V semiconductor family. It is primarily of research and developmental interest rather than a widespread commercial material, studied for potential optoelectronic and high-frequency electronic applications where its narrow bandgap and carrier mobility properties may offer advantages in specialized device designs. Engineers would consider BiAs in contexts requiring compound semiconductor materials for infrared detection, thermoelectric conversion, or high-speed electronics, though material availability and processing maturity remain limited compared to established alternatives like GaAs or InAs.

infrared detectorscompound semiconductorsthermoelectric deviceshigh-frequency electronicsresearch and developmentoptoelectronic applications

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	812	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.088	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	2.012	eV/atom	—
Formation Energy(ΔHf)	2.012	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BiAs

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental