Bi8 O8 F8
semiconductorBi₈O₈F₈ is a bismuth-based mixed-anion compound combining oxide and fluoride ions in a layered structure; it belongs to the broader class of bismuth oxyhalides, which are emerging functional semiconductors. This material is primarily investigated in research contexts for photocatalytic applications and optoelectronic devices, where the simultaneous presence of oxygen and fluorine anions can modulate electronic band structure and surface reactivity compared to binary oxides or fluorides alone. Its potential lies in environmental remediation (water purification, pollutant degradation) and next-generation optoelectronics, though it remains largely in the materials development phase rather than established commercial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |