Bi₈O₁₆ is a mixed-valence bismuth oxide compound belonging to the family of bismuth-based semiconductors, characterized by a layered crystal structure with potential photocatalytic and electronic properties. This material is primarily explored in research contexts for photocatalysis applications, including water splitting and pollutant degradation under visible light, as well as in optoelectronic devices where bismuth oxides offer advantages in band gap engineering and reduced toxicity compared to lead-based alternatives. The compound represents an environmentally friendly option within the bismuth oxide family, though it remains largely in development stages rather than mature industrial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02180 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.071 | eV/atom | — |