Bi₆O₈F₂ is a bismuth-based mixed-valent oxide fluoride semiconductor, representing a synthetic compound within the broad family of bismuth oxides and oxyhalides. This is primarily a research material rather than a commercialized engineering alloy, studied for its structural and electronic properties as part of fundamental investigations into layered bismuth compounds. The material's potential lies in photocatalysis, photovoltaic devices, and other optoelectronic applications where bismuth oxides have shown promise due to their narrow band gaps and visible-light activity—offering researchers an alternative to conventional semiconductors when tailored light absorption and catalytic activity are design goals.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 76.33 | GPa | — | ||
Shear Modulus(G) | 35.26 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7573 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.558 | eV/atom | — |