Bi₄Te₃N₂ is a bismuth telluride nitride ceramic compound that combines the thermoelectric properties of bismuth telluride with the structural stability imparted by nitrogen incorporation. This material is primarily studied in research contexts for thermoelectric and semiconducting applications, where the nitrogen doping is designed to enhance carrier mobility, reduce thermal conductivity, or improve mechanical stability compared to undoped bismuth telluride phases. Industrial adoption remains limited, but the material family shows promise for waste heat recovery systems and solid-state cooling devices where conventional thermoelectric materials face performance or durability constraints.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 8.003 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.3412 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.2030 | eV/atom | — |