Bi2V2Se4O16

semiconductor

· Bi2V2Se4O16

Bi₂V₂Se₄O₁₆ is a mixed-metal oxide semiconductor compound containing bismuth, vanadium, and selenium. This is primarily a research material within the layered oxide semiconductor family, studied for its potential in photocatalysis, optoelectronics, and energy conversion applications due to its tunable band gap and layered crystal structure. While not yet widely deployed in commercial products, materials in this compositional space are of interest for environmental remediation (pollutant degradation under light) and next-generation photovoltaic or photoelectrochemical devices as alternatives to more established semiconductors.

photocatalytic water treatmentenvironmental remediationoptoelectronic researchphotoelectrochemical cellsadvanced semiconductors (experimental)materials science research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.200	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Bi2V2Se4O16

Electrical Properties

Regulatory Screening

Environmental

Export Control