Bismuth selenide (Bi₂Se₃) is a layered chalcogenide semiconductor belonging to the topological insulator class of materials. It is primarily investigated in research and emerging device applications rather than established high-volume manufacturing, valued for its unique electronic band structure that enables exotic surface conductivity while maintaining an insulating bulk.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 12.50 | GPa | — | ||
| ↳ | 32.21 | GPa | — | ||
Exfoliation Energy(Eexf) | 125 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.3200 | - | — | ||
Shear Modulus(G)2 entries | 8.380 | GPa | — | ||
| ↳ | 16.33 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 7.502 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 0.4000 | eV | — | ||
| ↳ | 0.3500 | eV | — | ||
| ↳ | 0.9850 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 108.8 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -218.9 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.02520 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.2906 | eV/atom | — | ||
| ↳ | -0.3791 | eV/atom | — |