Bi2I4O13
semiconductorBi₂I₄O₁₃ is a bismuth iodide oxide semiconductor compound, belonging to the family of mixed-halide perovskites and bismuth-based semiconductors that have emerged as research materials for optoelectronic applications. This material is primarily of academic and developmental interest rather than established in high-volume industrial production, with potential applications in photovoltaics, radiation detection, and photoelectrochemical devices where bismuth compounds offer advantages including lower toxicity and greater stability compared to lead-based alternatives. Engineers considering this material should recognize it as an experimental compound under investigation for next-generation semiconductor technologies, particularly where environmental or regulatory constraints limit the use of conventional lead halides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |