Bi2Cu0.96Se3I

semiconductor

· Bi2Cu0.96Se3I

Bi₂Cu₀.₉₆Se₃I is a layered mixed-halide bismuth chalcogenide semiconductor, combining bismuth selenide with iodine doping and copper substitution to engineer electronic and transport properties. This is a research-phase compound under investigation for topological properties and thermoelectric applications, where the layered structure and controlled doping offer potential advantages in carrier mobility and thermal-to-electrical conversion efficiency compared to conventional bulk thermoelectrics.

thermoelectric power generationtopological materials researchsolid-state cooling deviceslow-temperature heat recoveryquantum transport studiesadvanced semiconductor research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6800	eV	—

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Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Bi2Cu0.96Se3I

Electrical Properties

Regulatory Screening

Environmental

Export Control