Bi₂S₄ is a bismuth sulfide semiconductor compound belonging to the chalcogenide material family, characterized by layered crystal structure and moderate mechanical stiffness. This material is primarily explored in research contexts for optoelectronic and photovoltaic applications, where its bandgap and light-absorption properties position it as a candidate for solar cells, photodetectors, and thermal imaging devices. Engineers consider bismuth chalcogenides when seeking alternatives to lead-based semiconductors in environmental-sensitive applications or when designing layered heterostructure devices, though material availability and processing standardization remain active research areas.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 38.94 | GPa | — | ||
Shear Modulus(G) | 12.55 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01200 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.07300 | eV/atom | — |