Bi₂O₂Se is a layered oxide-chalcogenide semiconductor combining bismuth, oxygen, and selenium in a two-dimensional crystal structure. This material is primarily of research interest for next-generation optoelectronic and thermoelectric devices, where its layered geometry and band structure offer potential advantages in light absorption, charge carrier mobility, and thermal transport compared to conventional bulk semiconductors. Applications under investigation include photovoltaic absorbers, photodetectors, and thermoelectric generators, though the material remains largely in academic development rather than established industrial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 96.09 | GPa | — | ||
Shear Modulus(G) | 27.01 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00940 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2480 | eV/atom | — |