Bi2I2O2 is an oxyhalide semiconductor compound combining bismuth, iodine, and oxygen in a layered crystal structure. It belongs to the family of bismuth-based halide perovskites and related oxyhalides, which are emerging materials in materials research for optoelectronic applications. This compound is primarily investigated in academic and early-stage development contexts for its potential in photovoltaics, photodetection, and light-emission devices, offering advantages over lead-based alternatives in terms of toxicity while maintaining semiconducting properties suitable for next-generation thin-film electronics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.576 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.078 | eV/atom | — |