Bi₂Au₂O₄ is an experimental mixed-metal oxide semiconductor containing bismuth and gold, representing an emerging compound in the family of multicomponent oxide semiconductors. This material is primarily of research interest rather than established industrial use, with potential applications in photocatalysis, optoelectronics, and advanced sensor technologies where the unique electronic properties arising from the Au-Bi oxide system could offer advantages over conventional binary semiconductors. The incorporation of noble metal gold into a bismuth oxide framework is notable for exploring new bandgap engineering opportunities and possible surface catalytic activity.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 70.66 | GPa | — | ||
Shear Modulus(G) | 25.21 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.097 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8840 | eV/atom | — |