Bi₁₄Te₁₃S₈ is a complex quaternary semiconductor compound combining bismuth, tellurium, and sulfur elements, belonging to the chalcogenide semiconductor family. This material is primarily of research interest for thermoelectric and optoelectronic applications, where layered bismuth chalcogenides are explored for solid-state energy conversion and potential topological electronic properties. Its mixed anion composition (telluride-sulfide) offers a tunable band structure pathway compared to binary bismuth telluride or sulfide alternatives, making it relevant to emerging thermoelectric device development and fundamental semiconductor physics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2172 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3130 | eV/atom | — |