Bi1N1 is an experimental binary semiconductor compound composed of bismuth and nitrogen, part of the wider family of III-V and related semiconductors being investigated for optoelectronic and electronic device applications. This material remains primarily in research phase, with potential relevance to wide-bandgap semiconductor engineering where bismuth-containing compounds are explored for their unique electronic structure and thermal properties. Interest in BiN systems stems from their potential to fill niche roles in next-generation semiconductors, though practical manufacturing and device integration remain active areas of study.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 117.3 | GPa | — | ||
Shear Modulus(G) | 40.86 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01860 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.218 | eV/atom | — |