Bi₁.₉₈Sb₀.₀₂Te₃ is a doped bismuth telluride compound, a narrow-bandgap semiconductor belonging to the V-VI chalcogenide family that forms the basis of commercial thermoelectric materials. This composition represents a heavily bismuth-rich variant with minimal antimony doping, engineered to optimize charge carrier concentration and thermal transport properties for thermoelectric energy conversion. The material is used in applications requiring direct thermal-to-electrical energy conversion or solid-state cooling, where it competes with other bismuth telluride alloys and skutterudites on the basis of doping level, figure-of-merit, and operating temperature range.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1400 | eV | — |