Bi1.8Te3Sb0.2

semiconductor
· Bi1.8Te3Sb0.2

Bi1.8Te3Sb0.2 is a doped bismuth telluride-based thermoelectric compound in which antimony partially substitutes for bismuth in the host Bi2Te3 lattice. This p-type semiconductor is engineered for solid-state heat-to-electricity conversion and refrigeration cycles, where the Sb doping modifies the carrier concentration and Seebeck coefficient relative to undoped Bi2Te3. The material belongs to the bismuth chalcogenide family—the current benchmark for room-temperature thermoelectric applications—and is selected by engineers when optimized power factor and thermal efficiency within the 200–400 K operating window are critical, particularly in waste heat recovery and compact cooling systems where conventional alternatives prove inefficient or mechanically incompatible.

thermoelectric power generationwaste heat recoverysolid-state refrigerationtemperature sensorsspace/aerospace thermal managementresearch thermoelectric optimization

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
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eV——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.