BGaO2N

ceramic

· BGaO2N

BGaO₂N is an oxynitride ceramic compound combining boron, gallium, oxygen, and nitrogen elements, representing an emerging class of wide-bandgap semiconductors and functional ceramics. This material is primarily investigated in research contexts for high-temperature structural applications, optoelectronic devices, and potentially as an alternative to traditional nitride ceramics where enhanced thermal or electronic properties are desired. BGaO₂N's mixed-anion composition positions it as a candidate for next-generation applications requiring thermal stability, chemical resistance, and controlled electronic properties beyond what conventional oxides or nitrides alone can provide.

wide-bandgap semiconductorshigh-temperature ceramicsoptoelectronic componentsthermal barrier coatingsresearch-phase advanced materials

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	3.000	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.720	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BGaO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental