BeTlAs is a ternary ceramic compound combining beryllium, thallium, and arsenic elements. This is an experimental/research material primarily investigated for semiconductor and optoelectronic applications, belonging to the broader family of III-V and II-VI compound semiconductors. The material's notable combination of elastic stiffness and relatively high density suggests potential applications in high-performance electronic devices or specialized photonic systems where compound semiconductors offer advantages over conventional silicon or III-V materials.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 1.220 | GPa | — | ||
Shear Modulus(G) | 1.990 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 7.734 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2480 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.3772 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.3630 | eV/atom | — |