BeTiOFN

semiconductor

· BeTiOFN

BeTiOFN is an experimental mixed-metal oxide-fluoride semiconductor compound combining beryllium, titanium, oxygen, and fluorine elements. This material family is primarily of research interest for next-generation optoelectronic and wide-bandgap semiconductor applications, where the fluorine incorporation may offer tunable electronic properties and enhanced thermal stability compared to conventional oxide semiconductors. Engineers and researchers evaluate such compounds for potential use in UV-transparent devices, high-temperature electronics, or radiation-resistant applications where beryllium-titanium combinations provide unique defect engineering or lattice property advantages.

wide-bandgap semiconductorsUV optoelectronicsexperimental materialshigh-temperature electronicsresearch/advanced developmentradiation-resistant applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.500	eV	—
Magnetic Moment(μB)	-1.107e-15	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.9800	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BeTiOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control