BeTiO₂S is an experimental ternary compound semiconductor combining beryllium, titanium, oxygen, and sulfur elements. This material belongs to the oxysulfide semiconductor family and is primarily of research interest for optoelectronic and photocatalytic applications, where the mixed anionic (O/S) structure can modulate bandgap and electronic properties compared to pure oxides or sulfides. The incorporation of beryllium—a lightweight, high-stiffness element—alongside titanium suggests potential interest in advanced functional ceramics, though BeTiO₂S remains largely in the exploratory stage without established high-volume industrial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.900 | eV | — | ||
Magnetic Moment(μB) | 0.0000313 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.140 | eV/atom | — |