BeSnAs is a ternary ceramic compound composed of beryllium, tin, and arsenic, representing an experimental material in the family of III-V and II-VI semiconductors. This material is primarily of research interest for potential semiconductor and optoelectronic applications, though it remains largely in the exploratory phase with limited industrial deployment. Engineers would investigate BeSnAs in advanced semiconductor research contexts where novel band structures or thermal/electrical properties might address specific device requirements not met by conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 62.50 | GPa | — | ||
Poisson's Ratio(ν) | -0.7900 | - | — | ||
Shear Modulus(G) | -19.74 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.568 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.4538 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.3182 | eV/atom | — |