BeSbAs is a ternary III-V semiconductor ceramic compound combining beryllium, antimony, and arsenic elements. This material belongs to the wider family of compound semiconductors and is primarily of research and developmental interest rather than widespread industrial use. Its potential applications focus on high-frequency optoelectronic devices and specialized semiconductor applications where the unique band structure and carrier properties of the Be-Sb-As system may offer advantages over more conventional III-V compounds.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 1.220 | GPa | — | ||
Shear Modulus(G) | 1.980 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.571 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.3944 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.3785 | eV/atom | — |