BeNbO2N

semiconductor

· BeNbO2N

BeNbO2N is an experimental ceramic compound combining beryllium, niobium, oxygen, and nitrogen—a material under research investigation rather than established in commercial production. This quaternary nitride oxide belongs to the wide-bandgap semiconductor family, positioning it for potential applications in high-temperature electronics, UV optoelectronics, and power devices where thermal stability and chemical resistance are critical. The incorporation of beryllium and niobium suggests exploration of materials that can operate at elevated temperatures with improved electronic performance compared to conventional semiconductors, though commercial maturity and scalable synthesis routes remain limited.

experimental high-temperature semiconductorswide-bandgap electronics researchUV/deep-UV optoelectronicspower device applicationsthermal barrier coatings (potential)advanced ceramic research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.300	eV	—
Magnetic Moment(μB)	-0.0000331	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.7400	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BeNbO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control