BeHfO2S

semiconductor

· BeHfO2S

BeHfO2S is an experimental mixed-metal oxide-sulfide semiconductor combining beryllium, hafnium, oxygen, and sulfur. This quaternary compound represents an exploratory material class targeted at wide-bandgap semiconductor applications where conventional semiconductors reach performance limits. The material family is of research interest for high-temperature electronics, radiation-hard devices, and advanced optoelectronics, though it remains predominantly in laboratory development rather than established industrial production.

Research semiconductorsHigh-temperature electronicsRadiation-resistant componentsWide-bandgap devicesExperimental optoelectronicsSpace/nuclear environments

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.800	eV	—
Magnetic Moment(μB)	-0.000282	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.9600	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BeHfO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control