BeGeSb is a ternary ceramic compound composed of beryllium, germanium, and antimony—a rare combination that falls within the broader family of III-V and II-VI semiconducting ceramics. This material is primarily of research and developmental interest rather than established industrial production, with potential applications in semiconductor and optoelectronic device research where the unique combination of these elements may offer novel electronic or thermal properties. Engineers would consider BeGeSb in early-stage projects exploring advanced semiconductor materials, thermoelectric devices, or specialized optical components where conventional materials reach performance limits, though material availability and processing maturity are significant constraints compared to established alternatives like GaAs or SiGe.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 42.00 | GPa | — | ||
Poisson's Ratio(ν) | 0.4000 | - | — | ||
Shear Modulus(G) | 5.740 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.639 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.4678 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.4678 | eV/atom | — |