BeGeO3 is an experimental oxide semiconductor compound combining beryllium and germanium elements, belonging to the wider family of wide-bandgap and transparent conductive oxide materials under active research. This material is primarily of academic and exploratory interest rather than established industrial production, with potential applications in next-generation optoelectronic devices where the combination of beryllium's hardness and thermal properties with germanium's semiconducting characteristics may offer advantages over conventional alternatives like zinc oxide or indium tin oxide.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | — | ||
| ↳ | 3.600 | eV | — | ||
Magnetic Moment(μB) | -0.0000119 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -1.002 | eV/atom | — | ||
| ↳ | 1.380 | eV/atom | — |