BeGdO3 is a rare-earth oxide semiconductor compound combining beryllium and gadolinium oxides, typically studied as an experimental material in advanced ceramics and solid-state physics research. This compound belongs to the family of rare-earth oxides with potential applications in high-temperature electronics, optical materials, and radiation-resistant ceramics, though it remains largely in the research phase without widespread industrial adoption. BeGdO3 is notable within the rare-earth semiconductor family for its potential thermal stability and electronic properties, making it of interest for specialized applications where conventional semiconductors or standard rare-earth compounds prove inadequate.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2380 | eV | — | ||
Magnetic Moment(μB) | 0.000 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.873 | eV/atom | — |