BeGaSb2

ceramic

· JVASP-71215· BeGaSb2

BeGaSb₂ is an experimental III-V semiconductor ceramic compound combining beryllium, gallium, and antimony. This material family is primarily of research interest for optoelectronic and high-frequency device applications, where the wide bandgap and thermal properties of beryllium-containing semiconductors could enable operation in extreme environments or high-power conditions. The compound remains largely in the research phase, with potential advantages over conventional GaAs or GaSb in niche applications requiring enhanced thermal stability or radiation hardness.

wide-bandgap semiconductorshigh-frequency electronics researchradiation-hard device developmentoptoelectronic materials researchspace/extreme environment components

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	5.726	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.3736	eV/atom	—
Formation Energy(ΔHf)	0.2993	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BeGaSb2

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental