BeGaN3

ceramic

· BeGaN3

BeGaN3 is a beryllium gallium nitride ceramic compound combining beryllium with a gallium nitride (GaN) matrix, representing an emerging wide-bandgap semiconductor material. This material is primarily of research and development interest for next-generation high-power and high-frequency electronic devices where enhanced thermal conductivity and electrical performance beyond conventional GaN are required. BeGaN3 belongs to the family of advanced nitride ceramics being explored for applications demanding superior heat dissipation and operational stability at extreme temperatures and power densities.

high-power RF/microwave devicesthermal management substrateswide-bandgap power electronicsnext-generation semiconductor packagingresearch/development applicationsextreme environment electronics

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	3.957	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.600	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BeGaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental