Be4 O7 Te1

semiconductor

· Be4 O7 Te1

Be₄O₇Te is an experimental oxide semiconductor compound combining beryllium oxide with tellurium, representing a relatively uncommon material composition in the oxide semiconductor family. This compound is primarily of research interest for investigating novel electronic and optical properties that may arise from the beryllium-tellurium-oxygen system, rather than a material with established industrial production or widespread commercial deployment. Potential applications under investigation include wide-bandgap semiconductor devices, photonic materials, or specialized optical components, though the material remains in early-stage development and is not commonly specified for production engineering.

experimental semiconductor researchwide-bandgap semiconductor devicesoptical/photonic materials developmentmaterials science characterizationhigh-temperature semiconductor explorationnext-generation electronics prototyping

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	188.0	GPa	—
Shear Modulus(G)	116.7	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.467	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.366	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Be4 O7 Te1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control