Be₃N₂ is a wide-bandgap semiconductor compound belonging to the beryllium nitride family, featuring a lightweight ceramic structure with high elastic stiffness. This material remains largely experimental and is pursued primarily in research settings for high-temperature and high-frequency electronic applications, where its extreme thermal stability and wide bandgap could theoretically outperform conventional semiconductors like GaN or SiC; however, manufacturing challenges and beryllium toxicity concerns have limited practical deployment compared to more mature wide-bandgap alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 213.7 | GPa | — | ||
| ↳ | 215.5 | GPa | — | ||
Poisson's Ratio(ν) | 0.2000 | - | — | ||
Shear Modulus(G)2 entries | 186.3 | GPa | — | ||
| ↳ | 162.9 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 2.655 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 3.800 | eV | — | ||
| ↳ | 3.048 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 95.49 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -247.2 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.02030 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -1.219 | eV/atom | — | ||
| ↳ | -1.228 | eV/atom | — |