Be₂O₄Zn₂ is a mixed-metal oxide semiconductor compound combining beryllium and zinc oxides in a spinel or related crystal structure. This material is primarily of research and experimental interest rather than established commercial production, explored for potential applications in optoelectronics and wide-bandgap semiconductor devices where the combination of beryllium and zinc oxides offers tunable electronic properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 173.4 | GPa | — | ||
Shear Modulus(G) | 92.55 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.971 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.270 | eV/atom | — |