Be2 Ge2 As4

semiconductor

· Be2 Ge2 As4

Be₂Ge₂As₄ is a quaternary semiconductor compound combining beryllium, germanium, and arsenic—a specialized material from the II-IV-V semiconductor family with potential for wide bandgap and optoelectronic applications. This is primarily a research compound rather than a production-volume material; it represents exploration of ternary and quaternary semiconductor systems for enhanced properties beyond binary alternatives like GaAs or binary germanium compounds. The material family is of interest for high-frequency electronics, UV detection, and radiation-hard device applications where beryllium's low atomic mass and wide bandgap potential could offer advantages in extreme environments.

wide-bandgap semiconductors (research)high-frequency electronicsradiation-hardened devicesUV/short-wavelength detectionaerospace/space applications (experimental)advanced optoelectronic research

Compliance & Regulations

?ITAR?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	70.39	GPa	—
Shear Modulus(G)	53.45	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6768	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.2000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

Quality & Standards

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Be2 Ge2 As4

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control

Quality & Standards