Be1 Zn1 O3

semiconductor

· Be1 Zn1 O3

Be₁Zn₁O₃ is an experimental mixed-metal oxide semiconductor combining beryllium and zinc oxides in a stoichiometric compound. This material belongs to the family of wide-bandgap semiconductors and represents research-phase development rather than established industrial production; it is studied primarily for potential applications requiring high thermal stability, radiation hardness, or unique electronic properties that differ from conventional binary oxides like BeO or ZnO.

Wide-bandgap semiconductors (research)High-temperature electronicsRadiation-hardened devicesThermal management substratesAdvanced optoelectronics (exploratory)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.02090	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.9800	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Be1 Zn1 O3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control