Be1Sb1As2 is a ternary intermetallic semiconductor compound combining beryllium, antimony, and arsenic in a stoichiometric ratio. This is a research-phase material primarily investigated for optoelectronic and high-frequency applications, belonging to the broader family of III-V and II-VI semiconductor compounds. The material's potential derives from its unique combination of light beryllium and heavy group-V elements, which may offer tunable bandgap properties and thermal characteristics for niche applications where conventional GaAs or InP semiconductors have limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00300 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.6550 | eV/atom | — |