Be1P2K4 is an experimental semiconductor compound belonging to the beryllium phosphide family with potassium doping or incorporation. This material is primarily of research interest rather than established commercial production, investigated for its potential in wide-bandgap semiconductor applications where beryllium compounds offer advantages in thermal stability and electronic properties. The potassium-modified composition suggests exploration of electrical or structural property tuning, though this particular formulation remains in early-stage development and is not widely adopted in mainstream industrial applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 19.63 | GPa | — | ||
Shear Modulus(G) | 10.26 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.221 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5060 | eV/atom | — |