Be1 In3

semiconductor

· Be1 In3

Be1In3 is an intermetallic compound combining beryllium and indium, belonging to the III-V semiconductor family with potential for high-frequency and optoelectronic applications. This material remains largely in the research phase, explored primarily for its electronic properties in specialized semiconductor contexts where the combination of beryllium's low density and indium's semiconductor characteristics may offer advantages over conventional III-V compounds. The material's practical adoption is limited due to beryllium's toxicity hazards, manufacturing complexity, and the availability of more mature alternatives like GaAs and InP for most commercial applications.

research semiconductorshigh-frequency devicesoptoelectronic compoundsspecialized RF applicationsexperimental electronic materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00280	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.4460	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Be1 In3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control