Be1 Ge2 Te1

semiconductor

· Be1 Ge2 Te1

BeGe₂Te is a ternary compound semiconductor composed of beryllium, germanium, and tellurium. This material belongs to the II-IV-VI semiconductor family and is primarily of research interest rather than an established industrial material. BeGe₂Te and related ternary chalcogenides are investigated for optoelectronic and thermoelectric applications, offering potential advantages in band gap engineering and thermal management compared to binary semiconductors, though commercial adoption remains limited.

research thermoelectricsoptoelectronic devicesinfrared detectorswide band gap semiconductorssolid-state coolingphase-change memory development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000900	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.6500	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Be1 Ge2 Te1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control