Be₁Ge₁B₁ is a ternary semiconductor compound combining beryllium, germanium, and boron in an apparently equiatomic composition. This is an experimental research material rather than a commercially established compound; the material family represents exploration of wide-bandgap and intermediate semiconductors that could bridge properties between conventional semiconductors (like Ge) and wide-bandgap materials (like BeO or GaN). Such ternary compounds are investigated for potential optoelectronic, high-temperature, or radiation-resistant device applications where conventional binaries show limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00890 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.7560 | eV/atom | — |