Be1 Ga1 O3
semiconductor· Be1 Ga1 O3
Beryllium gallium oxide (BeGaO₃) is an experimental wide-bandgap semiconductor compound belonging to the oxide semiconductor family. This material is primarily investigated in research settings for next-generation optoelectronic and high-power electronic applications, where its wide bandgap and thermal properties could enable devices operating at elevated temperatures and high voltages beyond the capabilities of conventional semiconductors like silicon or gallium arsenide.
wide-bandgap semiconductors (research)high-temperature electronics (developmental)UV optoelectronics (exploratory)power semiconductor devices (emerging)radiation-hardened electronics (potential)next-generation RF devices (experimental)
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.