Be1 Ga1 O3

semiconductor

· Be1 Ga1 O3

Beryllium gallium oxide (BeGaO₃) is an experimental wide-bandgap semiconductor compound belonging to the oxide semiconductor family. This material is primarily investigated in research settings for next-generation optoelectronic and high-power electronic applications, where its wide bandgap and thermal properties could enable devices operating at elevated temperatures and high voltages beyond the capabilities of conventional semiconductors like silicon or gallium arsenide.

wide-bandgap semiconductors (research)high-temperature electronics (developmental)UV optoelectronics (exploratory)power semiconductor devices (emerging)radiation-hardened electronics (potential)next-generation RF devices (experimental)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	172.4	GPa	—
Shear Modulus(G)	-11.00	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00150	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.078	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Be1 Ga1 O3

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control