Be1 is a beryllium-based semiconductor material, representing a specialized compound within the beryllium material family that exhibits both semiconducting electrical properties and the exceptional stiffness characteristic of beryllium systems. This material is primarily of research and development interest, being explored for high-performance optoelectronic and high-frequency applications where the combination of thermal stability, mechanical rigidity, and semiconducting behavior offers potential advantages over conventional silicon or gallium arsenide alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 124.7 | GPa | — | ||
Shear Modulus(G) | 146.5 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00640 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.1080 | eV/atom | — |