Barium tellurite (BaTeO₃) is an inorganic ceramic semiconductor compound combining barium and tellurium oxide. This material is primarily of research and emerging-technology interest rather than established high-volume production, with potential applications in optoelectronics, photonics, and solid-state devices where its semiconductor bandgap and crystal structure offer design possibilities distinct from more common alternatives like bismuth tellurates or lead tellurites.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 49.62 | GPa | — | ||
Poisson's Ratio(ν) | 0.2900 | - | — | ||
Shear Modulus(G) | 25.65 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.468 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 0.7430 | eV | — | ||
| ↳ | 1.200 | eV | — | ||
| ↳ | 2.804 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 19.49 | - | — | ||
| ↳ | 11.05 range 4.182–17.92median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB)2 entries | 0.0000169 | μB | — | ||
| ↳ | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -313.3 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)3 entries | -2.056 | eV/atom | — | ||
| ↳ | 0.2200 | eV/atom | — | ||
| ↳ | -2.084 | eV/atom | — |