BaTeMo₂O₉ is a mixed-metal oxide semiconductor compound containing barium, tellurium, and molybdenum. This material belongs to the family of complex oxide semiconductors and is primarily of research interest rather than established industrial production. The compound is investigated for potential applications in solid-state electronics, photocatalysis, and functional ceramic devices, where its semiconductor properties and thermal stability may offer advantages in niche high-temperature or specialty electronic applications compared to conventional semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.386 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 3.120 | eV | Measured | ||
| ↳ | 2.761 | eV | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 5.804 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00680 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -2.181 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data