BaNbO2N

semiconductor

· BaNbO2N

BaNbO₂N is an oxynitride semiconductor compound containing barium, niobium, oxygen, and nitrogen. This material is primarily investigated in research settings as a photocatalyst and functional ceramic for environmental and energy applications, particularly for water splitting and photocatalytic degradation under visible light. It represents an emerging class of metal oxynitride semiconductors that offers potential advantages over conventional oxide semiconductors through tunable bandgap engineering via nitrogen incorporation, though industrial adoption remains limited and material processing is still being optimized.

photocatalytic water splittingvisible-light photocatalysisenvironmental remediationhydrogen productionresearch/development semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.300	eV	—
Magnetic Moment(μB)	0.000102	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.1400	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BaNbO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control