BaInTe is a ternary ceramic compound composed of barium, indium, and tellurium, belonging to the chalcogenide ceramic family. This material is primarily of research interest for semiconductor and optoelectronic applications, where the combination of these elements can yield properties relevant to infrared detection, photovoltaic conversion, or wide-bandgap device applications. Engineers would consider BaInTe in exploratory projects requiring specialized electronic or photonic functionality in extreme environments, though it remains largely in the development phase compared to more established ceramic semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 21.57 | GPa | — | ||
Poisson's Ratio(ν) | 0.4900 | - | — | ||
Shear Modulus(G) | -7.580 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.883 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7890 range 0.000–1.578median of 2 measurements | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.6975 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.5759 | eV/atom | — |