BaInS (barium indium sulfide) is an inorganic ceramic compound combining barium, indium, and sulfur elements. This material belongs to the family of chalcogenide ceramics and is primarily investigated in research contexts for optoelectronic and photonic device applications, particularly where wide bandgap semiconductors or optical transparency in specific wavelength ranges is required. Its significance lies in potential applications demanding materials with tailored electronic properties distinct from conventional oxides, though it remains largely experimental rather than a commodity engineering ceramic.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8.190 | GPa | — | ||
Shear Modulus(G) | 3.790 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 2.824 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.00200 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 1.383 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.1353 | eV/atom | — |